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| SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SD2324 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features Low saturation voltage. +0.1 2.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Large current capacity. Small-sized package facilitating the realization of high-density, small-sized hybrid ICs. 0.55 Contains a bias resistor between base and emitter. +0.1 1.3-0.1 Contains a diode between colletor and emitter. 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage, With Zener diode (113V) Collector-emitter voltage, With Zener diode (113V) Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 20 15 5 0.8 2 200 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Diode forward voltage Base-emitter resistance VF RBE Symbol IcBO hFE fT Cob Testconditons VCB = 15V , IE = 0 VCE = 2V , IC = 0.5A VCE = 2V , IC = 0.5A VCB = 10V , f = 1MHz 70 150 15 0.16 0.85 20 20 15 1.5 1 V kU 0.3 1.2 MHz pF V V V V Min Typ Max 1.0 Unit iA VCE(sat) IC = 500mA , IB = 10mA VBE(sat) IC = 500mA , IB = 10mA V(BR)CBO IC = 10iA , IE = 0 IC = 10iA , RBE = V(BR)CEO IC = 10mA , RBE = IF = 0.5A Marking Marking BN +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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